Provides High Performance for Next-Generation
                  Military/Aerospace Applications

IRVINE, Calif., March 9, 2010 (GLOBE NEWSWIRE) -- Microsemi Corporation
(Nasdaq:MSCC), a leading manufacturer of high performance analog mixed
signal integrated circuits and high reliability semiconductors,
announced today the introduction of a new 1,500 watt RF power
transistor for UHF pulsed radar applications, expanding its
industry-leading portfolio of high power silicon carbide transistors.

Designated the Model 0405SC-1500M, the new device from Microsemi's RF
Integrated Solutions group, utilizes state-of-the-art SiC technology to
provide unparalleled 1,500W peak power performance in a compact
single-ended package that replaces complex push-pull balun circuitry
found in conventional silicon BJT or LDMOS solutions.

"We are very excited to lead the market with this silicon carbide
broadband transistor specifically designed for UHF Band pulsed radar in
military and aerospace applications," said Charles Leader, Microsemi
RFIS Vice President. "This new 1,500 watt device demonstrates our
ability to extend this advanced technology through aggressive
investment. We now can support next-generation UHF radar designs with a
full series of silicon carbide transistors having powers rated at 100
watts, 500 watts, 1000 watts and now the 0405SC-1500M at 1,500 watts.

The 0405SC-1500M is a high performance, common gate, class AB, high
power transistor designed for UHF frequencies from 406 to 450 MHz. It
is built with 100% gold metallization and gold wires in a hermetically
sealed package providing highest reliability for weather radar and over
the horizon radar applications.

System Benefits with 0405SC-1500M SiC transistors:


  --  Single-ended simple impedance-matching design replaces complex push-pull
      balun circuitry
  --  Industry's highest peak power for reduced system power: 4-way
      combination yields 5kW with margin
  --  High operating voltage slashes power supply size and dc current demand
  --  Low conducting current minimizes system noise effect
  --  Extremely rugged performance improves system yields
  --  50% smaller size than equivalent silicon devices
  --  All gold metallization and gold wire for military grade long term
      reliability
  --  Hermetic, solder-sealed packaging extends lifetime operation




The 0405SC-1500M transistor utilizes new chip design and processing
enhancements to offer state-of-the-art performance, notably in high
power, small transistor and circuit size over the specified frequency
range with 300us pulse width and 6% duty cycle.

0405SC-1500M Key Product Features:


  --  Designed for 406 -- 450 MHz UHF radar
  --  Medium Pulse Format: 300 us, 6%
  --  1,500 watt output power
  --  High power gain: 8 dB Typ
  --  Drain efficiency: 45 % @450MHz
  --  Compression: In Compression
  --  Vdd: +125V
  --  Ruggedness capable of VSWR-T 5:1




Demo units for the entire line of Microsemi silicon carbide transistors
are available now by contacting the factory or by email request to
sic@microsemi.com. Technical datasheets are available on the Microsemi
website at http://www.microsemi.com.

About Microsemi

Microsemi Corporation, with corporate headquarters in Irvine,
California, is a leading designer, manufacturer and marketer of high
performance analog and mixed-signal integrated circuits, high
reliability semiconductors and RF subsystems. The company's
semiconductors manage and control or regulate power, protect against
transient voltage spikes and transmit, receive and amplify signals.

Microsemi's products include individual components as well as
integrated circuit solutions that enhance customer designs by improving
performance and reliability, battery optimization, reducing size or
protecting circuits. The principal markets the company serves include
implanted medical, defense/aerospace and satellite, notebook computers,
monitors and LCD TVs, automotive and mobile connectivity applications.
More information may be obtained by contacting the company directly or
by visiting its website at http://www.microsemi.com.

The Microsemi Corporation logo is available at
http://www.globenewswire.com/newsroom/prs/?pkgid=1233

"Safe Harbor" Statement under the Private Securities Litigation Reform
Act of 1995: Any statements set forth in this news release that are not
entirely historical and factual in nature, including without limitation
statements concerning the introduction of a new 1,500 watt RF power
transistor for UHF pulsed radar applications, expanding its
industry-leading portfolio of high power silicon carbide transistors,
are forward-looking statements. These forward-looking statements are
based on our current expectations and are inherently subject to risks
and uncertainties that could cause actual results to differ materially
from those expressed in the forward-looking statements. The potential
risks and uncertainties include, but are not limited to, such factors
as rapidly changing technology and product obsolescence, potential cost
increases, variations in customer order preferences, weakness or
competitive pricing environment of the marketplace, uncertain demand
for and acceptance of the company's products, adverse circumstances in
any of our end markets, results of in-process or planned development or
marketing and promotional campaigns, difficulties foreseeing future
demand, potential non-realization of expected orders or non-realization
of backlog, product returns, product liability, and other potential
unexpected business and economic conditions or adverse changes in
current or expected industry conditions, difficulties and costs of
protecting patents and other proprietary rights, inventory obsolescence
and difficulties regarding customer qualification of products. In
addition to these factors and any other factors mentioned elsewhere in
this news release, the reader should refer as well to the factors,
uncertainties or risks identified in the company's most recent Form
10-K and all subsequent Form 10-Q reports filed by Microsemi with the
SEC. Additional risk factors may be identified from time to time in
Microsemi's future filings. The forward-looking statements included in
this release speak only as of the date hereof, and Microsemi does not
undertake any obligation to update these forward-looking statements to
reflect subsequent events or circumstances.


CONTACT:  Microsemi Corporation
          Financial Contact:
          John Hohener, Vice President and CFO
          Editorial Contact:
          Cliff Silver, Corporate Communications Manager
          (949) 221-7100