RF Micro Devices Unveils rGaN-HV Process Technology for Power Device Products and Foundry Customers
GlobeNewswire 2012-04-26
GREENSBORO, N.C., April 26, 2012 (GLOBE NEWSWIRE) -- RF Micro Devices,
Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of
high-performance radio frequency components and compound semiconductor
technologies, today announced the extension of RFMD's industry-leading
GaN process technology portfolio to include a new technology optimized
for high voltage power devices in power conversion applications.
RFMD's newest GaN process technology -- rGaN-HV(TM) -- enables
substantial system cost and energy savings in power conversion
applications ranging from 1 to 50 KW. RFMD's rGaN-HV delivers device
breakdown voltages up to 900 volts, high peak current capability, and
ultra-fast switching times for GaN power switches and diodes. The new
technology complements RFMD's GaN 1 process, which is optimized for
high power RF applications and delivers high breakdown voltage over 400
volts, and RFMD's GaN 2 process, which is optimized for high linearity
applications and delivers high breakdown voltage over 300 volts. RFMD
will manufacture discrete power device components for customers in its
Greensboro, NC, wafer fabrication facility (fab) and provide access to
rGaN-HV to foundry customers for their customized power device
solutions.
Bob Bruggeworth, President and Chief Executive Officer of RFMD, said,
"The global demand for energy savings through improved power conversion
efficiency is creating a tremendous opportunity for high-performance
power devices based on RFMD's GaN power process technologies. We expect
our newest GaN power process will expand our opportunities in the
high-voltage power semiconductor market, and we are pleased to provide
access to rGaN-HV to our external foundry customers to support their
success in the high-performance power device market."
RFMD's Power Conversion Devices Product Line and Foundry Services
Business Unit will exhibit a broad portfolio of GaN technologies and
GaN power products at the PCIM Power Industry Conference, May 8-10, in
Nuremberg, Germany. More information on RFMD's foundry services can be
obtained by contacting RFMDFoundryServices@rfmd.com or by clicking on
http://www.rfmd.com/products/powerconversion/
About RFMD
RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design
and manufacture of high-performance radio frequency components and
compound semiconductor technologies. RFMD's products enable worldwide
mobility, provide enhanced connectivity and support advanced
functionality in the cellular handset, wireless infrastructure,
wireless local area network (WLAN), CATV/broadband and aerospace and
defense markets. RFMD is recognized for its diverse portfolio of
semiconductor technologies and RF systems expertise and is a preferred
supplier to the world's leading mobile device, customer premises and
communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001-, ISO 14001-,
and ISO/TS 16949-certified manufacturer with worldwide engineering,
design, sales and service facilities. RFMD is traded on the NASDAQ
Global Select Market under the symbol RFMD. For more information,
please visit RFMD's web site at www.rfmd.com.
The RF Micro Devices, Inc. logo is available at
http://www.globenewswire.com/newsroom/prs/?pkgid=6436
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CONTACT: At RFMD(R)
Doug DeLieto
VP, Investor Relations
336-678-7088
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